Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films

Sahar Saremi, Jieun Kim, Anirban Ghosh, Derek Meyers, and Lane W. Martin
Phys. Rev. Lett. 123, 207602 – Published 15 November 2019
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Abstract

The effect of intrinsic point defects on relaxor properties of 0.68 PbMg1/3Nb2/3O30.32 PbTiO3 thin films is studied across nearly 2 orders of magnitude of defect concentration via ex post facto ion bombardment. A weakening of the relaxor character is observed with increasing concentration of bombardment-induced point defects, which is hypothesized to be related to strong interactions between defect dipoles and the polarization. Although more defects and structural disorder are introduced in the system as a result of ion bombardment, the special type of defects that are likely to form in these polar materials (i.e., defect dipoles) can stabilize the direction of polarization against thermal fluctuations, and in turn, weaken relaxor behavior.

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  • Received 27 February 2019
  • Revised 17 June 2019

DOI:https://doi.org/10.1103/PhysRevLett.123.207602

© 2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied PhysicsGeneral Physics

Authors & Affiliations

Sahar Saremi1, Jieun Kim1, Anirban Ghosh1, Derek Meyers1, and Lane W. Martin1,2,*

  • 1Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, USA
  • 2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

  • *Corresponding author. lwmartin@berkeley.edu

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Issue

Vol. 123, Iss. 20 — 15 November 2019

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