Dynamic Pattern Formation in Electron-Beam-Induced Etching

Aiden A. Martin, Alan Bahm, James Bishop, Igor Aharonovich, and Milos Toth

Phys. Rev. Lett. 115, 255501 – Published 15 December 2015

Abstract

We report highly ordered topographic patterns that form on the surface of diamond, span multiple length scales, and have a symmetry controlled by the precursor gas species used in electron-beam-induced etching (EBIE). The pattern formation dynamics reveals an etch rate anisotropy and an electron energy transfer pathway that is overlooked by existing EBIE models. We, therefore, modify established theory such that it explains our results and remains universally applicable to EBIE. The patterns can be exploited in controlled wetting, optical structuring, and other emerging applications that require nano- and microscale surface texturing of a wide band-gap material.

Received 2 October 2015

DOI:https://doi.org/10.1103/PhysRevLett.115.255501

Authors & Affiliations

Aiden A. Martin^1,2, Alan Bahm^1,3, James Bishop¹, Igor Aharonovich^1,*, and Milos Toth^1,†

¹School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
²Lawrence Livermore National Laboratory, Livermore, California 94550, USA
³FEI Company, 5350 Northeast Dawson Creek Drive, Hillsboro, Oregon 97124, USA