Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO2

K. Martens, J. W. Jeong, N. Aetukuri, C. Rettner, N. Shukla, E. Freeman, D. N. Esfahani, F. M. Peeters, T. Topuria, P. M. Rice, A. Volodin, B. Douhard, W. Vandervorst, M. G. Samant, S. Datta, and S. S. P. Parkin
Phys. Rev. Lett. 115, 196401 – Published 4 November 2015
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Abstract

The intrinsic field effect, the change in surface conductance with an applied transverse electric field, of prototypal strongly correlated VO2 has remained elusive. Here we report its measurement enabled by epitaxial VO2 and atomic layer deposited high-κ dielectrics. Oxygen migration, joule heating, and the linked field-induced phase transition are precluded. The field effect can be understood in terms of field-induced carriers with densities up to 5×1013cm2 which are strongly localized, as shown by their low, thermally activated mobility (1×103cm2/Vs at 300 K). These carriers show behavior consistent with that of Holstein polarons and strongly impact the (opto)electronics of VO2.

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  • Received 19 January 2015

DOI:https://doi.org/10.1103/PhysRevLett.115.196401

© 2015 American Physical Society

Authors & Affiliations

K. Martens1,2,3, J. W. Jeong1, N. Aetukuri1, C. Rettner1, N. Shukla6, E. Freeman6, D. N. Esfahani4, F. M. Peeters4, T. Topuria1, P. M. Rice1, A. Volodin5, B. Douhard3, W. Vandervorst3,5, M. G. Samant1, S. Datta6, and S. S. P. Parkin1

  • 1IBM Research-Almaden, San Jose, California 95120, USA
  • 2ESAT Department, KU Leuven, Leuven BE-3001, Belgium
  • 3IMEC, Kapeldreef 75, Leuven BE-3001, Belgium
  • 4Physics Department, University of Antwerp, Groenenborgerlaan 171 BE-2020, Antwerp BE-2020, Belgium
  • 5Department of Physics and Astronomy, KU Leuven, Leuven BE-3001, Belgium
  • 6Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA

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Issue

Vol. 115, Iss. 19 — 6 November 2015

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