The light-dressing effect in Xe atoms was identified in laser-assisted elastic electron scattering (LAES) signals. In the angular distribution of LAES signals with energy shifts of $\pm \hslash \omega$ recorded by the scattering of 1 keV electrons by Xe in an intense nonresonant laser field, a peak profile appeared at small scattering angles ($<0.5°$). This peak was interpreted as evidence of the light dressing of Xe atoms induced by an intense laser field on the basis of a numerical simulation in which the light-dressing effect is included.

• Received 26 February 2015

DOI:https://doi.org/10.1103/PhysRevLett.115.123201