Figure 1
(a) Schematic energy diagram of the device, containing two layers of self-assembled indium gallium arsenide QDs, separated by a 9 nm gallium aresenide tunnel barrier and embedded in a gallium aresenide Schottky diode. (b) Ground and lowest-lying optically excited states in the (1,1) regime. Blue arrows indicate electron spins in the bottom QD, red single (double) arrows indicate electron (hole) spins in the top QD. (c) Schematic energy diagram of the ground and optically excited states versus
. A magnetic field in Faraday geometry induces Zeeman splittings proportional to the
factors shown, with
(
) denoting the electronic
factor in the red (blue) QD, and
the hole
factor in the red QD. The dotted red line indicates the sweet spot, where
. Inset: Circularly polarized dipole-allowed optical transitions between the states shown in (b). (d) Differential reflection (dR) measurement of the trion transitions in the red QD of CQD1 versus
at
, measured around saturation power (laser Rabi frequency
) in the presence of a weak nonresonant (850 nm) laser. Blue (green) dashed lines indicate the
(
) transition energies, extracted from two-laser repump measurements [
23], and the dotted red line indicates the sweet spot. The unmarked diagonal feature in the top right-hand corner is due to indirect transitions involving the (1,2) charging ground state. Inset:
versus
, including a parabolic fit (red line).
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