The ability to independently dictate the shape and crystal orientation of islands in electrocrystallization remains a significant challenge. The main reason for this is that the complex interplay between the substrate, nucleation, and surface chemistry is not fully understood. Here we report on the kinetics of island growth for copper on ruthenium oxide. The small nucleation overpotential leads to enhanced lateral growth and the formation of hexagonal disk-shaped islands. The amorphous substrate allows the nuclei to achieve the thermodynamically favorable orientation, i.e., a $⟨111⟩$ surface normal. Island growth follows power law kinetics in both lateral and vertical directions. At shorter times, the two growth exponents are equal to $\frac{1}{2}$ whereas at longer times lateral growth slows down while vertical growth speeds up. We propose a growth mechanism, wherein the lateral growth of disk-shaped islands is initiated by attachment of Cu adatoms on the ruthenium oxide surface onto the island periphery while vertical growth is initiated by two-dimensional nucleation on the top terrace and followed by lateral step propagation. These results indicate three criteria for enhanced lateral growth in electrodeposition: (i) a substrate that leads to a small nucleation overpotential, (ii) fast adatom surface diffusion on substrate to promote lateral growth, and (iii) preferential anion adsorption to stabilize the basal plane.

• Received 23 December 2008

DOI:https://doi.org/10.1103/PhysRevE.79.051601