Nonuniversal critical behavior in disordered pseudospin-1 systems

A. Fang, Z. Q. Zhang, Steven G. Louie, and C. T. Chan
Phys. Rev. B 99, 014209 – Published 24 January 2019
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Abstract

It is well known that for ordinary one-dimensional (1D) disordered systems, the Anderson localization length ξ diverges as λm in the long-wavelength limit (λ) with a universal exponent m=2, independent of the type of disorder. Here, we show rigorously that pseudospin-1 systems exhibit nonuniversal critical behavior when they are subjected to 1D random potentials. In such systems, we find that ξλm with m depending on the type of disorder. For binary disorder, m=6 and the fast divergence is due to a super-Klein-tunneling effect. When we add additional potential fluctuations to the binary disorder, the critical exponent m crosses over from 6 to 4 as the wavelength increases. Moreover, for disordered superlattices, in which the random potential layers are separated by layers of background medium, the exponent m is further reduced to 2 due to the multiple reflections inside the background layer. To obtain the above results, we developed an analytic method based on a stack recursion equation. Our analytical results are in excellent agreement with the numerical results obtained by the transfer-matrix method. For pseudospin-1/2 systems, we find both numerically and analytically that ξλ2 for all types of disorder, same as ordinary 1D disordered systems. Our analytical method provides a convenient way to obtain easily the critical exponent m for general 1D Anderson localization problems.

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  • Received 29 November 2018

DOI:https://doi.org/10.1103/PhysRevB.99.014209

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

A. Fang1, Z. Q. Zhang1, Steven G. Louie2,3,4, and C. T. Chan1,*

  • 1Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
  • 2Institute for Advanced Study, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
  • 3Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA
  • 4Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

  • *phchan@ust.hk

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Issue

Vol. 99, Iss. 1 — 1 January 2019

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