Electrical tuning of spin splitting in Bi-doped ZnO nanowires

Mehmet Aras and Çetin Kılıç
Phys. Rev. B 97, 035405 – Published 3 January 2018
PDFHTMLExport Citation

Abstract

The effect of applying an external electric field on doping-induced spin-orbit splitting of the lowest conduction-band states in a bismuth-doped zinc oxide nanowire is studied by performing electronic structure calculations within the framework of density functional theory. It is demonstrated that spin splitting in Bi-doped ZnO nanowires could be tuned and enhanced electrically via control of the strength and direction of the applied electric field, thanks to the nonuniform and anisotropic response of the ZnO:Bi nanowire to external electric fields. The results reported here indicate that a single ZnO nanowire doped with a low concentration of Bi could function as a spintronic device, the operation of which is controlled by applied lateral electric fields.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
1 More
  • Received 18 September 2017
  • Revised 30 November 2017

DOI:https://doi.org/10.1103/PhysRevB.97.035405

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Mehmet Aras and Çetin Kılıç*

  • Department of Physics, Gebze Technical University, 41400 Gebze Kocaeli, Turkey

  • *cetin_kilic@gtu.edu.tr

Article Text (Subscription Required)

Click to Expand

Supplemental Material (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 97, Iss. 3 — 15 January 2018

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×