The Hall effect resistivity ${\rho }_{xy}$ of high-quality films of the itinerant ferromagnet ${\mathrm{SrRuO}}_3$ was measured at low temperatures. ${\mathrm{SrRuO}}_3$ films have large uniaxial magnetocrystalline anisotropy, and in the relevant temperature range the easy axis is ${30}^{\circ }$ degrees from the film normal. We measure changes in ${\rho }_{xy}$ associated with changes in the orientation of the magnetization (M) for the same applied magnetic field B $\left[\mathrm{\Delta }{\rho }_{xy}(\mathbf{B},\mathrm{\Delta }\mathbf{M})\right]$, and we find that with increasing B, $\mathrm{\Delta }{\rho }_{xy}(\mathbf{B},\mathrm{\Delta }\mathbf{M})$ changes its sign and its magnitude becomes more than an order of magnitude larger than the remanent (spontaneous) anomalous Hall effect. Furthermore, it appears that ${\rho }_{xy}$ cannot be described as a sum of a term that depends on B and a term that depends on M, that is, the ordinary Hall effect and the anomalous Hall effect are effectively intermixed. We address qualitatively a possible link between the observed behavior of ${\rho }_{xy}$ and the predicted existence of Weyl nodes in ${\mathrm{SrRuO}}_3$.

• Received 21 June 2015
• Revised 7 October 2015

DOI:https://doi.org/10.1103/PhysRevB.92.235101