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Acoustic and optical phonon scattering in a single In(Ga)As quantum dot

Erik Stock, Matthias-Rene Dachner, Till Warming, Andrei Schliwa, Anatol Lochmann, Axel Hoffmann, Aleksandr I. Toropov, Askhat K. Bakarov, Ilya A. Derebezov, Marten Richter, Vladimir A. Haisler, Andreas Knorr, and Dieter Bimberg
Phys. Rev. B 83, 041304(R) – Published 19 January 2011

Abstract

Coupling of acoustic and optical phonons to excitons in single InGaAs/GaAs quantum dots is investigated in detail experimentally and theoretically as a function of temperature. For the theoretical description of the luminescence spectrum, including acoustic and optical phonon scattering, we used the exactly solvable independent boson model. Surprisingly, only GaAs bulk-type longitudinal-optical (LO) phonons are detected in experiment. A quantitatively correct theoretical description of the optical-phonon replica is obtained by including a limited lifetime of the phonons and the dispersion of the LO phonon energy. Similarly, a numerically correct description of the acoustic phonon wings is again based on GaAs bulk material parameters for the phonon dispersion and deformation coupling. In addition, the line shape of the calculated spectra agrees with experiment only when realistic wave functions (e.g., based on eight-band k·p theory) are used for the electron-phonon coupling matrix elements. Gaussian wave functions describing the ground state of a harmonic oscillator fail to describe high-energy tails. Thus, fundamental insights of importance for the correct prediction of properties of nonclassical light sources, based on semiconductor nanostructures, are obtained.

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  • Received 13 September 2010

DOI:https://doi.org/10.1103/PhysRevB.83.041304

© 2011 American Physical Society

Authors & Affiliations

Erik Stock1,*, Matthias-Rene Dachner2, Till Warming1, Andrei Schliwa1, Anatol Lochmann1, Axel Hoffmann1, Aleksandr I. Toropov3, Askhat K. Bakarov3, Ilya A. Derebezov3, Marten Richter2,4, Vladimir A. Haisler3, Andreas Knorr2, and Dieter Bimberg1

  • 1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
  • 2Institut für theoretische Physik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
  • 3Institute of Semiconductor Physics, Lavrenteva av 13, Novosibirsk 630090, Russia
  • 4Department of Chemistry, University of California, Irvine, California 92697-2025, USA

  • *erik@sol.physik.tu-berlin.de

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Vol. 83, Iss. 4 — 1 January 2011

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