Thermodynamic properties and atomistic structure of the dry amorphous silica surface from a reactive force field model

Raffaela Cabriolu and Pietro Ballone
Phys. Rev. B 81, 155432 – Published 16 April 2010

Abstract

A force field model of the Keating type supplemented by rules to break, form, and interchange bonds is applied to investigate thermodynamic and structural properties of the amorphous SiO2 surface. A simulated quench from the liquid phase has been carried out for a silica sample made of 3888 silicon and 7776 oxygen atoms arranged on a slab 40Å thick, periodically repeated along two directions. The quench results into an amorphous sample, exposing two parallel square surfaces of 42nm2 area each. Thermal averages computed during the quench allow us to determine the surface thermodynamic properties as a function of temperature. The surface tension turns out to be γ=310±20erg/cm2 at room temperature and γ=270±30 at T=2000K, in fair agreement with available experimental estimates. The entropy contribution Tss to the surface tension is relatively low at all temperatures, representing at most 20% of the surface energy. Almost without exceptions, Si atoms are fourfold coordinated and oxygen atoms are twofold coordinated. Twofold and threefold rings appear only at low concentration and are preferentially found in proximity of the surface. Above the glass temperature Tg=1660±50K, the mobility of surface atoms is, as expected, slightly higher than that of bulk atoms. The computation of the height-height correlation function shows that the silica surface is rough in the equilibrium and undercooled liquid phase, becoming smooth below the glass temperature Tg.

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  • Received 17 January 2010

DOI:https://doi.org/10.1103/PhysRevB.81.155432

©2010 American Physical Society

Authors & Affiliations

Raffaela Cabriolu1 and Pietro Ballone2

  • 1Centre for Molecular Nanoscience, University of Leeds, Leeds LS2 9JT, United Kingdom
  • 2Atomistic Simulation Centre, Queen’s University Belfast, Belfast BT7 1NN, United Kingdom

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Issue

Vol. 81, Iss. 15 — 15 April 2010

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