Strain effect on quantum conductance of graphene nanoribbons from maximally localized Wannier functions

R. Rasuli, H. Rafii-Tabar, and A. Iraji zad
Phys. Rev. B 81, 125409 – Published 5 March 2010

Abstract

Density-functional study of strain effects on the electronic band structure and transport properties of the graphene nanoribbons (GNR) is presented. We apply a uniaxial strain (ε) in the x (nearest-neighbor) and y (second-nearest-neighbor) directions, related to the deformation of zigzag- and armchair-edge GNRs (AGNR and ZGNR), respectively. We calculate the quantum conductance and band structures of the GNR using the Wannier function in a strain range from 8% to +8% (minus and plus signs show compression and tensile strain). As strain increases, depending on the AGNR family type, the electrical conductivity changes from an insulator to a conductor. This is accompanied by a variation in the electron and hole effective masses. The compression εx in ZGNR shifts some bands to below the Fermi level (Ef) and the quantum conductance does not change but the tensile εx causes an increase in the quantum conductance to 10e2/h near the Ef. For transverse direction, it is very sensitive to strain and the tensile εy causes an increase in the conductance while the compressive εy decreases the conductance at first but increases it later.

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  • Received 31 October 2009

DOI:https://doi.org/10.1103/PhysRevB.81.125409

©2010 American Physical Society

Authors & Affiliations

R. Rasuli

  • Department of Physics, Sharif University of Technology, P.O. Box 11365-9161, Tehran, Iran

H. Rafii-Tabar*

  • Computational Physical Sciences Research Laboratory, Department of Nano-Science, Institute for Research in Fundamental Sciences (IPM), P.O. Box 19395-5531, Tehran, Iran and Department of Medical Physics and Biomedical Engineering and Research Center for Medical Nanotechnology and Tissue Engineering, Shahid Beheshti University of Medical Sciences, Evin, Tehran, Iran

A. Iraji zad

  • Department of Physics, Sharif University of Technology, P.O. Box 11365-9161, Tehran, Iran and Institute for Nanoscience and Nanotechnology (INST), Sharif University of Technology, P.O. Box 14588-89694, Tehran, Iran

  • *rafii-tabar@nano.ipm.ac.ir

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Vol. 81, Iss. 12 — 15 March 2010

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