Monte Carlo simulation of the semimetal-insulator phase transition in monolayer graphene

Wes Armour, Simon Hands, and Costas Strouthos
Phys. Rev. B 81, 125105 – Published 4 March 2010

Abstract

A 2+1-dimensional fermion field theory is proposed as a model for the low-energy electronic excitations in monolayer graphene. The model consists of Nf=2 four-component Dirac fermions moving in the plane and interacting via a contact interaction between charge densities. For strong couplings there is a continuous transition to a Mott insulating phase. We present results of an extensive numerical study of the model’s critical region, including the order parameter, its associated susceptibility, and the quasiparticle propagator. The data enable an extraction of the critical exponents at the transition (including the dynamical critical exponent) which are hypothesized to be universal features of a quantum critical point. The relation of our model with others in the literature is discussed along with the implications for physical graphene following from our value of the critical coupling.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
2 More
  • Received 4 November 2009

DOI:https://doi.org/10.1103/PhysRevB.81.125105

©2010 American Physical Society

Authors & Affiliations

Wes Armour1, Simon Hands2, and Costas Strouthos3

  • 1Diamond Light Source, Harwell Campus, Didcot, Oxfordshire OX11 0DE, United Kingdom
  • 2Department of Physics, Swansea University, Singleton Park, Swansea SA2 8PP, United Kingdom
  • 3Department of Mechanical Engineering, University of Cyprus, Nicosia 1678, Cyprus

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 81, Iss. 12 — 15 March 2010

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×