Negative refraction index in the magnetic semiconductor In2xCrxO3: Theoretical analysis

Adil-Gerai Kussow and Alkim Akyurtlu
Phys. Rev. B 78, 205202 – Published 12 November 2008

Abstract

Based on theoretical arguments, we have found that homogeneous indium oxide is a negative refractive index material if doped with Cr. In accordance with calculations, this magnetic semiconductor or In2xCrxO3 in its polycrystalline form should possess a fully isotropic strongly pronounced negative refractive index at 10.48THz. The effect is due to the coexistence of the spin-wave mode with the plasmonic mode, and both modes are activated by the electromagnetic field of the light with simultaneous permittivity and permeability responses within the frequency band close to the ferromagnetic resonance. The analytical and numerical calculations of the frequency-dependent refractive index, n(ω), were conducted in the framework of the macroscopic theory of ferromagnets, the modified band theory, and the conduction electrons-mediated exchange integral formalism.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 2 March 2008

DOI:https://doi.org/10.1103/PhysRevB.78.205202

©2008 American Physical Society

Authors & Affiliations

Adil-Gerai Kussow1 and Alkim Akyurtlu2

  • 1Department of Physics, University of Massachusetts, Lowell, Massachusetts 01854, USA
  • 2Electrical and Computer Engineering Department, University of Massachusetts, Lowell, Massachusetts 01854, USA

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 78, Iss. 20 — 15 November 2008

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×