Weak localization in ${\text{Al}}_{x}{\text{Ga}}_{1\ensuremath{-}x}\text{As}/\text{GaAs}/{\text{Al}}_{x}{\text{Ga}}_{1\ensuremath{-}x}\text{As}$ heterostructures with electrostatically induced random antidot array

Weak localization in ${Al}_{x} {Ga}_{1 - x} As / GaAs / {Al}_{x} {Ga}_{1 - x} As$ heterostructures with electrostatically induced random antidot array

G. M. Minkov, A. A. Sherstobitov, A. V. Germanenko, and O. E. Rut

Phys. Rev. B 78, 195319 – Published 19 November 2008

Abstract

Results of experimental study of the weak localization in gated ${Al}_{x} {Ga}_{1 - x} As / GaAs / {Al}_{x} {Ga}_{1 - x} As$ structures with artificial inhomogeneity of potential relief are presented. It has been found that the shape of the magnetoconductivity curve differs significantly from that measured for the homogeneous two-dimensional gas. This difference is shown to be caused by the difference in statistics of closed paths. The area distribution function of closed paths has been obtained using the Fourier transformation of the experimental magnetoconductivity curves taken at different temperatures. The results obtained are in qualitative agreement with the results of computer simulation.