Quantum transport properties of carbon nanotube field-effect transistors with electron-phonon coupling

Hiroyuki Ishii, Nobuhiko Kobayashi, and Kenji Hirose
Phys. Rev. B 76, 205432 – Published 26 November 2007

Abstract

We investigated the electron-phonon coupling effects on the electronic transport properties of metallic (5,5)- and semiconducting (10,0)-carbon nanotube devices. We calculated the conductance and mobility of the carbon nanotubes with micron-order lengths at room temperature, using the time-dependent wave-packet approach based on the Kubo-Greenwood formula within a tight-binding approximation. We investigated the scattering effects of both longitudinal acoustic and optical phonon modes on the transport properties. The electron-optical phonon coupling decreases the conductance around the Fermi energy for the metallic carbon nanotubes, while the conductance of semiconductor nanotubes is decreased around the band edges by the acoustic phonons. Furthermore, we studied the Schottky-barrier effects on the mobility of the semiconducting carbon nanotube field-effect transistors for various gate voltages. We clarified how the electron mobilities of the devices are changed by the acoustic phonon.

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  • Received 28 May 2007

DOI:https://doi.org/10.1103/PhysRevB.76.205432

©2007 American Physical Society

Authors & Affiliations

Hiroyuki Ishii1,2,*, Nobuhiko Kobayashi2,1, and Kenji Hirose3,1

  • 1CREST, Japan Science and Technology (JST) Agency
  • 2Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
  • 3Nano Electronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan

  • *Present address: National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan; ishii@bk.tsukuba.ac.jp

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Issue

Vol. 76, Iss. 20 — 15 November 2007

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