Theoretical study of small silicon clusters in 4HSiC

T. Hornos, N. T. Son, E. Janzén, and A. Gali
Phys. Rev. B 76, 165209 – Published 31 October 2007

Abstract

We have studied the small clusters of silicon and carbon interstitials by ab initio supercell calculations in 4HSiC. We found that silicon interstitials can form stable and electrically active complexes with each other or with a carbon interstitial. Local vibration modes and ionization energies were also calculated in order to help the identification of the defects. We propose that silicon interstitials can emit from these clusters at relatively high temperatures, which may play an important role in the formation of the DI center.

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  • Received 16 April 2007

DOI:https://doi.org/10.1103/PhysRevB.76.165209

©2007 American Physical Society

Authors & Affiliations

T. Hornos1, N. T. Son2, E. Janzén2, and A. Gali1

  • 1Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8., H-1111, Budapest, Hungary
  • 2Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden

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Issue

Vol. 76, Iss. 16 — 15 October 2007

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