Anisotropic electron spin lifetime in (In,Ga)AsGaAs (110) quantum wells

L. Schreiber, D. Duda, B. Beschoten, G. Güntherodt, H.-P. Schönherr, and J. Herfort
Phys. Rev. B 75, 193304 – Published 7 May 2007

Abstract

Anisotropic electron spin lifetimes in strained undoped (In,Ga)AsGaAs (110) quantum wells of different widths and heights are investigated by time-resolved Faraday rotation and time-resolved transmission and are compared to the (001) orientation. From the suppression of spin precession as a function of transverse magnetic fields, the ratio of in-plane to out-of-plane spin lifetimes is calculated. While the ratio increases with In concentration in agreement with theory, an unprecedented high anisotropy of 480 is observed for the broadest quantum well at the low In concentration, when expressed in terms of spin relaxation times.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 22 December 2006

DOI:https://doi.org/10.1103/PhysRevB.75.193304

©2007 American Physical Society

Authors & Affiliations

L. Schreiber, D. Duda, B. Beschoten, and G. Güntherodt

  • II. Physikalisches Institut, RWTH Aachen University, and Virtual Institute for Spin Electronics (ViSel), Templergraben 55, 52056 Aachen, Germany

H.-P. Schönherr and J. Herfort

  • Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 75, Iss. 19 — 15 May 2007

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×