Enhancing the magnetoelectric coupling in YMnO3 by Ga doping

A. A. Nugroho, N. Bellido, U. Adem, G. Nénert, Ch. Simon, M. O. Tjia, M. Mostovoy, and T. T. M. Palstra
Phys. Rev. B 75, 174435 – Published 24 May 2007

Abstract

We study the magnetoelectric coupling in YMnO3 single crystal, in which a part of Mn3+ ions is substituted by nonmagnetic Ga3+ ions. While the antiferromagnetic ordering temperature is gradually suppressed by Ga doping, the magnetocapacitance is enhanced by two orders of magnitude, which we attribute to the lifting of frustration of interlayer spin interactions in doped samples. We also find that the dielectric constant anomaly below magnetic ordering temperature is strongly anisotropic, which we explain using a phenomenological Landau description of ferroelectric antiferromagnets.

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  • Received 17 October 2006

DOI:https://doi.org/10.1103/PhysRevB.75.174435

©2007 American Physical Society

Authors & Affiliations

A. A. Nugroho1,2, N. Bellido3, U. Adem1, G. Nénert1, Ch. Simon3, M. O. Tjia2, M. Mostovoy1,4, and T. T. M. Palstra1

  • 1Materials Science Center, University of Groningen, 9747 AG Groningen, The Netherlands
  • 2Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung 40132, Indonesia
  • 3Laboratoire CRISMAT, UMR CNRS ENSICAEN, 1450 Caen, France
  • 4II. Physikalisches Institut, University of Cologne, 50937 Cologne, Germany

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Issue

Vol. 75, Iss. 17 — 1 May 2007

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