Electrical transport properties of single-crystal antimony nanowire arrays

Y. Zhang, L. Li, G. H. Li, and L. D. Zhang
Phys. Rev. B 73, 113403 – Published 22 March 2006

Abstract

Single crystalline Sb nanowire arrays with diameters ranging from 9 to 40nm embedded in anodic alumina membranes were prepared by pulsed electrodeposition. Electrical transport measurements confirm the existence of the transition from a positive temperature coefficient of resistance to a negative one with decreasing diameter of the Sb nanowires. The weak localization effect is considered to play an important role in determining the temperature-dependent behavior of the resistance. The weak temperature dependence of the single crystalline Sb nanowire arrays might find application in constant resistance nanodevices.

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  • Received 7 November 2005

DOI:https://doi.org/10.1103/PhysRevB.73.113403

©2006 American Physical Society

Authors & Affiliations

Y. Zhang, L. Li, G. H. Li*, and L. D. Zhang

  • Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People’s Republic of China

  • *Author to whom correspondence should be addressed. Electronic address: ghli@issp.ac.cn

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Issue

Vol. 73, Iss. 11 — 15 March 2006

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