Abstract
Single crystalline Sb nanowire arrays with diameters ranging from 9 to embedded in anodic alumina membranes were prepared by pulsed electrodeposition. Electrical transport measurements confirm the existence of the transition from a positive temperature coefficient of resistance to a negative one with decreasing diameter of the Sb nanowires. The weak localization effect is considered to play an important role in determining the temperature-dependent behavior of the resistance. The weak temperature dependence of the single crystalline Sb nanowire arrays might find application in constant resistance nanodevices.
- Received 7 November 2005
DOI:https://doi.org/10.1103/PhysRevB.73.113403
©2006 American Physical Society