Metal-induced gap states in epitaxial organic-insulator/metal interfaces

Manabu Kiguchi, Ryotaro Arita, Genki Yoshikawa, Yoshiaki Tanida, Susumu Ikeda, Shiro Entani, Ikuyo Nakai, Hiroshi Kondoh, Toshiaki Ohta, Koichiro Saiki, and Hideo Aoki

Phys. Rev. B 72, 075446 – Published 31 August 2005

Abstract

We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown organic insulator/metal interfaces. The experiment is done for alkane/Cu(001) with an element-selective near edge x-ray absorption fine structure (NEXAFS), which exhibits a prepeak indicative of MIGS. An ab initio electronic structure calculation supports the existence of the MIGS. When the Cu substrate is replaced with Ni, an interface magnetism may be possible with a carrier doping.

Received 11 January 2005

DOI:https://doi.org/10.1103/PhysRevB.72.075446

Authors & Affiliations

Manabu Kiguchi^1,*, Ryotaro Arita^2,†, Genki Yoshikawa³, Yoshiaki Tanida⁴, Susumu Ikeda¹, Shiro Entani¹, Ikuyo Nakai³, Hiroshi Kondoh³, Toshiaki Ohta³, Koichiro Saiki^1,3, and Hideo Aoki²

¹Department of Complexity Science and Engineering, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
²Department of Physics, University of Tokyo, Hongo, Tokyo 113-0033, Japan
³Department of Chemistry, University of Tokyo, Hongo, Tokyo 113-0033, Japan
⁴Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan

^*Present address: Department of Chemistry, Hokkaido University, Sapporo 060-0810, Japan.
^†Present address: Max-Planck-Institut für Festköoperforschung, Stuttgart, Germany.

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand

Issue

Vol. 72, Iss. 7 — 15 August 2005

Reuse & Permissions

Access Options

Author publication services for translation and copyediting assistance advertisement

Physical Review B

covering condensed matter and materials physics