Nonsymmetrized Hamiltonian for semiconducting nanostructures in a magnetic field

V. Mlinar, M. Tadić, B. Partoens, and F. M. Peeters
Phys. Rev. B 71, 205305 – Published 5 May 2005

Abstract

In the framework of the Burt-Foreman theory a nonsymmetrized eight-band effective-mass Hamiltonian is derived for nanostructures in the presence of a magnetic field. The Hamiltonian is tested for the case of a cylindrical quantum dot with parabolic in-plane confinement potential in a perpendicular magnetic field. We compare the results of our nonsymmetrized model to the single-band and conventional multiband calculations, where ad hoc symmetrization is used. The model is tested on GaAsAl0.3Ga0.7As, GaAsAlAs, and InAsGaAs quantum dots, where strain is not included in the model in order to resolve the influence of the boundary on the electronic structure. In structures with a large difference of Luttinger parameters between the constituent materials, such as InAsGaAs quantum dots, the conventional multiband models lead to unphysical high magnetic-field solutions that are substantially different from those obtained from the nonsymmetrized Hamiltonian and single-band model for the ground state. A similar behavior is observed for the case of InAsGaAs quantum wells, where energy levels as a function of kt are analyzed. This discrepancy is attributed to an overestimation of band mixing in conventional models because of the inappropriate treatment of the boundary.

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  • Received 31 August 2004

DOI:https://doi.org/10.1103/PhysRevB.71.205305

©2005 American Physical Society

Authors & Affiliations

V. Mlinar*, M. Tadić, B. Partoens, and F. M. Peeters

  • Departement Fysica, Universiteit Antwerpen (Campus Drie Eiken), Universiteitsplein 1, B-2610 Antwerpen, Belgium

  • *Electronic address: vladan.mlinar@ua.ac.be
  • Permanent address: Faculty of Electrical Engineering, University of Belgrade, P.O. Box 3554, 11120 Belgrade, Serbia.
  • Electronic address: francois.peeters@ua.ac.be

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Vol. 71, Iss. 20 — 15 May 2005

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