Generation of spin current and polarization under dynamic gate control of spin-orbit interaction in low-dimensional semiconductor systems

C. S. Tang, A. G. Mal’shukov, and K. A. Chao

Phys. Rev. B 71, 195314 – Published 13 May 2005

Abstract

Based on the Keldysh formalism, the Boltzmann kinetic equation and the drift-diffusion equation have been derived for studying spin-polarization flow and spin accumulation under effect of the time-dependent Rashba spin-orbit interaction in a semiconductor quantum well. The time-dependent Rashba interaction is provided by time-dependent electric gates of appropriate shapes. Several examples of spin manipulation by gates have been considered. Mechanisms and conditions for obtaining the stationary spin density and the induced rectified dc spin current are studied.

Received 7 December 2004

DOI:https://doi.org/10.1103/PhysRevB.71.195314

Authors & Affiliations

C. S. Tang¹, A. G. Mal’shukov², and K. A. Chao³

¹Physics Division, National Center for Theoretical Sciences, P.O. Box 2-131, Hsinchu 30013, Taiwan
²Institute of Spectroscopy, Russian Academy of Science, 142190, Troitsk, Moscow oblast, Russia
³Solid State Theory Division, Department of Physics, Lund University, S-22362 Lund, Sweden

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Vol. 71, Iss. 19 — 15 May 2005

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Physical Review B

covering condensed matter and materials physics