Anisotropic exchange interactions in III-V diluted magnetic semiconductors

C. Timm and A. H. MacDonald
Phys. Rev. B 71, 155206 – Published 25 April 2005

Abstract

The RKKY interaction between substitutional Mn local moments in GaAs is both spin-direction dependent and spatially anisotropic. In this paper we address the strength of these anisotropies using a semiphenomenological tight-binding model that treats the hybridization between Mn d-orbitals and As p-orbitals perturbatively and accounts realistically for its nonlocality. We show that valence-band spin-orbit coupling, exchange nonlocality, and band-structure anisotropy all play a role in determining the strength of these effects. We use the results to estimate the degree of ground-state magnetization suppression due to frustrating interactions between randomly located Mn ions and to comment on the relationships between different models of III-V diluted magnetic semiconductor ferromagnetism.

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  • Received 5 January 2005

DOI:https://doi.org/10.1103/PhysRevB.71.155206

©2005 American Physical Society

Authors & Affiliations

C. Timm1,* and A. H. MacDonald2,†

  • 1Institut für Theoretische Physik, Freie Universität Berlin, Arnimallee 14, D-14195 Berlin, Germany
  • 2Physics Department, University of Texas at Austin, Austin, Texas 78712-0264, USA

  • *Electronic address: timm@physik.fu-berlin.de
  • Electronic address: macd@physics.utexas.edu

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Vol. 71, Iss. 15 — 15 April 2005

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