Abstract
We address and explain the occurrence of bulk and interface modes in zinc-blende group-III–group-V semiconductor layer structures observed by spectroscopic ellipsometry at infrared wavelengths. Fano- and Brewster-type transverse-magnetic (-polarized) interface modes as well as transverse-electric (-polarized) surface-guided interface modes are assigned by solutions of the surface polariton dispersion relations for polar semiconductor layer structures. We show that the Berreman-effect [D. W. Berreman, Phys. Rev. 130, 2193 (1963)] is associated with the occurrence of a Fano-interface polariton. Experimental verification is demonstrated for a GaAs homostructure, which consists of differently Te-doped -type substrates covered by undoped epilayers.
1 More- Received 26 November 2003
DOI:https://doi.org/10.1103/PhysRevB.71.035324
©2005 American Physical Society