Coherent approach to transport and noise in double-barrier resonant diodes

V. Ya. Aleshkin, L. Reggiani, N. V. Alkeev, V. E. Lyubchenko, C. N. Ironside, J. M. L. Figueiredo, and C. R. Stanley
Phys. Rev. B 70, 115321 – Published 23 September 2004

Abstract

We implement a quantum approach which includes long range Coulomb interaction and investigate current voltage characteristics and shot noise in double-barrier resonant diodes. The theory applies to the region of low applied voltages up to the region of the current peak and considers the wide temperature range from zero to room temperature. The shape of the current voltage characteristic is well reproduced and we confirm that even in the presence of Coulomb interaction the shot noise can be suppressed with a Fano factor well below the value of 0.5. This feature can be an indication of coherent tunneling since the standard sequential tunneling predicts in general a Fano factor equal to or greater than the value 0.5. This giant suppression is a consequence of Pauli principle as well as long range Coulomb interaction. The theory generalizes previous findings and is compared with experiments.

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  • Received 15 January 2003

DOI:https://doi.org/10.1103/PhysRevB.70.115321

©2004 American Physical Society

Authors & Affiliations

V. Ya. Aleshkin

  • Institute for Physics of Microstructures, Nizhny Novgorod GSP-105 603600, Russia

L. Reggiani

  • National Nanostructure Laboratory of INFM, Dipartimento di Ingegneria dell’ Innovazione, Università di Lecce, Via Arnesano s/n, 73100 Lecce, Italy

N. V. Alkeev and V. E. Lyubchenko

  • Institute of Radioengineering and Electronics, Russian Academy of Sciences, Moscow District B-71, Russia

C. N. Ironside, J. M. L. Figueiredo, and C. R. Stanley

  • Department of Electronic and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, United Kingdom

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Issue

Vol. 70, Iss. 11 — 15 September 2004

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