A new theory is given of surface scattering in semiconductors by surface point charges, corresponding to trapping in chemisorption bonds or defects. Interference effects, between waves scattered from different scatterers, are evaluated in terms of the statistical structure factor of the surface-point-charge array. Dielectric image effects are included. The scattering potential is taken from the recent statistical treament of the three-dimensional non-planar semiconductor-surface space charge given by Greene, Bixler, and Lee. The need for multiple scattering treatment of evanescent states is discussed. Comparison with previous theory is made.

• Received 9 August 1972

DOI:https://doi.org/10.1103/PhysRevB.7.1384