Charge-state dependence of InAs quantum-dot emission energies

S. Schulz, S. Schnüll, Ch. Heyn, and W. Hansen
Phys. Rev. B 69, 195317 – Published 28 May 2004
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Abstract

The emission of electrons from self-assembled InAs quantum dots (SAQDs) is probed with transient capacitance spectroscopy (DLTS). The SAQDs are epitaxially grown on (100) GaAs and embedded in a slightly doped Schottky diode. Unprecedented resolution in our measurements enables us to determine different energies for emission from the s shell and the p shell of the quantum dots and to observe a strong field dependence of the activation energies derived from our DLTS spectra. Furthermore, we resolve different DLTS peaks for the emission from singly and doubly occupied s shells. The analysis of our data reveals that both the electric field as well as charge-state dependence of our spectra can be explained by a model in which phonon-assisted tunneling plays a crucial role for emission from the quantum-dot s state.

  • Received 18 July 2003

DOI:https://doi.org/10.1103/PhysRevB.69.195317

©2004 American Physical Society

Authors & Affiliations

S. Schulz, S. Schnüll, Ch. Heyn, and W. Hansen

  • Institute for Applied Physics, University of Hamburg, D-20355 Hamburg, Germany

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Issue

Vol. 69, Iss. 19 — 15 May 2004

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