Aggregation of carbon interstitials in silicon carbide: A theoretical study

A. Gali, P. Deák, P. Ordejón, N. T. Son, E. Janzén, and W. J. Choyke
Phys. Rev. B 68, 125201 – Published 8 September 2003
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Abstract

Ab initio supercell calculations have been carried out to investigate clusters of carbon interstitials in 3C- and 4H-SiC. Based on the calculated formation energies, the complex formation of carbon interstitials or their aggregation to carbon antisites is energetically favored in SiC. The electronic and vibronic properties of the carbon interstitials and their aggregates depends strongly on the polytype. Using the calculated hyperfine constants and local vibrational modes of carbon clusters the possible relation to known carbon-related centers will be discussed.

  • Received 7 May 2003

DOI:https://doi.org/10.1103/PhysRevB.68.125201

©2003 American Physical Society

Authors & Affiliations

A. Gali1, P. Deák1, P. Ordejón2, N. T. Son3, E. Janzén3, and W. J. Choyke4

  • 1Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, Hungary
  • 2Institut de Ciéncia de Materials de Barcelona (CSIC), Campus de la Universitat Autónoma de Barcelona, E-08193 Bellaterra, Barcelona, Spain
  • 3Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
  • 4Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA

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Vol. 68, Iss. 12 — 15 September 2003

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