High-temperature phonon thermal conductivity of nanostructures

L. Braginsky, N. Lukzen, V. Shklover, and H. Hofmann
Phys. Rev. B 66, 134203 – Published 8 October 2002
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Abstract

Phonon propagation in the disordered nanostructures at a high (about the Debye temperature or higher) temperature is considered. Scattering at the grain boundaries is assumed to be the main mechanism restricting the thermal conductivity. Influence of the structure (the grain size and its dispersion, the pore diameter and their volume concentration, and the intergrain interface structure) as well as temperature on the thermal conductivity is discussed.

  • Received 12 March 2002

DOI:https://doi.org/10.1103/PhysRevB.66.134203

©2002 American Physical Society

Authors & Affiliations

L. Braginsky*

  • Institute of Semiconductor Physics, 630090 Novosibirsk, Russia

N. Lukzen

  • International Tomography Centre, 630090 Novosibirsk, Russia

V. Shklover

  • Laboratory of Crystallography, Swiss Federal Institute of Technology, CH-8092 Zurich, Switzerland

H. Hofmann

  • Powder Technology Laboratory, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland

  • *Electronic address: brag@isp.nsc.ru

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Issue

Vol. 66, Iss. 13 — 1 October 2002

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