Dissociation mechanism of methanol on a Si(111)(7×7) surface studied by scanning tunneling microscopy

Zhao-Xiong Xie, Yusuke Uematsu, Xin Lu, and Ken-ichi Tanaka
Phys. Rev. B 66, 125306 – Published 11 September 2002
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Abstract

Adsorption of methanol on a Si(111)7×7 surface was studied by means of scanning tunneling microscopy (STM). The STM image of adatoms and the tunneling spectroscopy at the rest atom position suggest that the CH3OH molecule dissociates on an adatom and rest atom pair by forming SiOCH3 and Si-H, respectively. At saturation, half of the adatoms, three adatoms, and all three rest atoms are changed to SiOCH3 and Si-H in every half unit cell. When the adatom changes to SiOCH3, the Si adatom becomes invisible at the bias potential of 2.0 V. In contrast, SiOCH3 and the intact adatom have equal image intensity at 3.0 V, although center adatoms are brighter than corner adatoms. As a result, the saturated surface shows a characteristic uniform pattern at 3.0 V, although half of the adatoms are SiOCH3 and the other half are intact Si adatoms. By counting darkened corner and center adatoms at the bias of 2.0 V, the site-dependent kinetics for the adsorption of CH3OH was established. The sticking probability for the formation of SiOCH3 and Si-H was independent of the coverage, and the number of SiOCH3 in each half unit cell is consecutively increased in a sequence of 1, 2, and 3 with increasing exposure. These facts indicate that the dissociation of CH3OH is accomplished via a precursor state in each half unit cell: that is, each half unit cell works independently as if it were a molecule.

  • Received 6 March 2002

DOI:https://doi.org/10.1103/PhysRevB.66.125306

©2002 American Physical Society

Authors & Affiliations

Zhao-Xiong Xie1,2, Yusuke Uematsu1, Xin Lu2, and Ken-ichi Tanaka1,*

  • 1Advanced Science Research Laboratory, Saitama Institute of Technology, 1690 Fusaiji, Okabe, Saitama, Japan
  • 2State Key Laboratory for Physical Chemistry of Solid Surfaces; Department of Chemistry, Xiamen University, Xiamen 361005, China

  • *Author to whom all correspondence should be addressed.

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Vol. 66, Iss. 12 — 15 September 2002

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