Magnetotransport properties of the ternary carbide Ti3SiC2: Hall effect, magnetoresistance, and magnetic susceptibility

P. Finkel, J. D. Hettinger, S. E. Lofland, M. W. Barsoum, and T. El-Raghy
Phys. Rev. B 65, 035113 – Published 28 December 2001
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Abstract

In this study we report on the transport properties of the Ti-based ternary carbide Ti3SiC2. The Hall effect and longitudinal magnetoresistance have been measured as a function of temperature in the 4–300 K range and at magnetic fields up to 5 T. The magnetoresistance is dominated by a positive quadratic field dependence at low temperatures. The Hall voltage is a linear function of magnetic field over the range of temperatures investigated. The effective carrier concentration and mobilities were calculated based on the sign and value of the Hall coefficient. These results are discussed in terms of a two-band model and compared to the single-band approximation. The magnetic susceptibility (4.1×106) was found to be independent of temperature and field. These results were used to evaluate the charge concentration in light of Pauli paramaganetism theory.

  • Received 28 June 2001

DOI:https://doi.org/10.1103/PhysRevB.65.035113

©2001 American Physical Society

Authors & Affiliations

P. Finkel, J. D. Hettinger, and S. E. Lofland

  • Department of Chemistry and Physics, Center for Materials Research and Education, Rowan University, Glassboro, New Jersey 08028

M. W. Barsoum and T. El-Raghy

  • Department of Materials Engineering, Drexel University, Philadelphia, Pennsylvania 19104

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Vol. 65, Iss. 3 — 15 January 2002

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