Based on molecular-dynamics simulations using the Tersoff interatomic potential, Motooka et al. recently proposed an atomistic model for solid-phase epitaxial (SPE) growth onto a Si(001) substrate [Phys. Rev. B 61, 8537 (2000)]. In their model, the SPE growth mode and its activation energy are different in the lower (1450–1600 K) and higher temperature (1600–2000 K) regions. In this Comment, we show that the amorphous-to-liquid phase transition occurs above $\sim 1650$ K, so Motooka’s simulations do not reproduce the SPE processes at higher temperature.

• Received 18 May 2000

DOI:https://doi.org/10.1103/PhysRevB.63.237401