Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold

A. Cavalleri, C. W. Siders, C. Rose-Petruck, R. Jimenez, Cs. Tóth, J. A. Squier, C. P. J. Barty, K. R. Wilson, K. Sokolowski-Tinten, M. Horn von Hoegen, and D. von der Linde
Phys. Rev. B 63, 193306 – Published 27 April 2001
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Abstract

The pulse-width dependence of thermal melting and ablation thresholds in germanium and gallium arsenide is correlated to direct, ultrafast x-ray measurements of laser-heated depths. The heating dynamics, determined by the interplay of nonlinear optical absorption, delayed Auger heating, and high-density carrier diffusion, explain the scaling laws of thermal melting thresholds in different semiconductors.

  • Received 19 December 2000

DOI:https://doi.org/10.1103/PhysRevB.63.193306

©2001 American Physical Society

Authors & Affiliations

A. Cavalleri*, C. W. Siders, C. Rose-Petruck, R. Jimenez§, Cs. Tóth, J. A. Squier, C. P. J. Barty, and K. R. Wilson**

  • The University of California San Diego, 9500 Gilman Drive, La Jolla, California, 92093-0339

K. Sokolowski-Tinten, M. Horn von Hoegen, and D. von der Linde

  • Institut für Laser- und Plasmaphysik, Universität Essen, D-45117 Essen, Germany

  • *Present address: Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA. Email: acavalleir@lbl.gov
  • Present address: The School of Optics/CREOL, The University of Central Florida, Orlando, Florida.
  • Present address: Department of Chemistry, Brown University, Providence, Rhode Island.
  • §Present address: The Scripps Research Institute, La Jolla, California.
  • Present address: The Center for Beam Physics, Lawrence Berkeley National Laboratory, Berkeley, California.
  • Present address: Lawrence Livermore National Laboratory, Livermore California.
  • **Deceased.

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Vol. 63, Iss. 19 — 15 May 2001

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