In situ core-level and valence-band photoelectron spectroscopy of reactively sputtered titanium aluminum nitride films

Andreas Schüler and Peter Oelhafen
Phys. Rev. B 63, 115413 – Published 1 March 2001
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Abstract

Titanium aluminum nitride (Ti-Al-N) films were deposited by reactive magnetron cosputtering. Core-level photoelectron spectroscopy and valence-band photoelectron spectroscopy served to characterize these films. Samples can consist of one single nanocrystalline phase, the substitutional solid solution (Ti, Al)N. There exist also ranges of compositions where a nanocomposite material is formed. This inhomogeneous film structure is indicated by shifts of the Fermi edge, which can be explained by a one-electron charging effect of nanometer-sized metallic clusters being embedded in an electrically insulating matrix. The multitude of possible chemical bonding situations within the ternary system are reflected by the core-level spectra. Complex Ti 2p line shapes may also be due to the screening properties of the conduction electrons. Valence-band spectra reveal electronic properties from metallic to dielectric character, depending on the elemental composition. In the case of nitrogen-saturated films the spectral intensity close to the Fermi edge is correlated with the Ti content.

  • Received 20 July 2000

DOI:https://doi.org/10.1103/PhysRevB.63.115413

©2001 American Physical Society

Authors & Affiliations

Andreas Schüler* and Peter Oelhafen

  • Institut für Physik der Universität Basel, Klingelbergstr. 82, CH-4056 Basel, Switzerland

  • *Email address: andreas-m.schueler@unibas.ch

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Issue

Vol. 63, Iss. 11 — 15 March 2001

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