Two-dimensional exciton dynamics and gain formation processes in InxGa1xN multiple quantum wells

Akihiro Satake, Yasuaki Masumoto, Takao Miyajima, Tsunenori Asatsuma, and Masao Ikeda
Phys. Rev. B 60, 16660 – Published 15 December 1999
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Abstract

We investigated exciton dynamics in InxGa1xN multiple quantum wells at 2 K and room temperature by means of time-resolved photoluminescence and pump-and-probe measurements. Under low excitation density, the temporal change of the spontaneous emission indicated slow dynamical features of the two-dimensional exciton localization, while, above a stimulation threshold density, the decay time of the emission was shortened to be less than 30ps due to the stimulated emission process. Further, the time-resolved pump-and-probe measurement revealed a fast relaxation of photoexcited delocalized electron-hole (eh) pairs into localized states. Above stimulation threshold, localized states were saturated, and eh pairs at delocalized states were observed. Two-dimensional eh pairs at delocalized states relaxed into localized states and excitons were formed, from which the optical gain was formed in terms of the stimulated emission process.

  • Received 26 May 1999

DOI:https://doi.org/10.1103/PhysRevB.60.16660

©1999 American Physical Society

Authors & Affiliations

Akihiro Satake and Yasuaki Masumoto

  • Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
  • Single Quantum Dot Project, ERATO, JST, Tsukuba, Ibaraki 300-2635, Japan

Takao Miyajima, Tsunenori Asatsuma, and Masao Ikeda

  • Research Center, Sony Corporation, Yokohama, Kanagawa 240-0031, Japan

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Vol. 60, Iss. 24 — 15 December 1999

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