Fractional bond model for silicon clusters

Youhua Luo, Jijun Zhao, and Guanghou Wang
Phys. Rev. B 60, 10703 – Published 15 October 1999
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Abstract

Si6 and Si7 are the two largest clusters with confirmed geometries experimentally. The apex atoms in the pentagonal bipyramidal structure for Si7 have a coordination number of 6, completely different from the tetrahedral structure of the diamond lattice, and never given a definite explanation so far. In this paper, we suggest that atomic bondings in small silicon clusters be the unsaturated covalent, rather than covalent-bond. We introduce the number of bond order and defined it as the ratio of the number of valence electron of an atom to the effective coordination number of the ith atom, which can be smaller than 1 or greater. An ad hoc tight-binding model (fractional bond model) for silicon clusters is constructed by explicitly incorporating the dependence of hopping integrals between two atoms on the number of bond order, and their ground state structures of silicon clusters are performed. The results indicate that this model is successful in determining the structures of free small silicon clusters.

  • Received 20 July 1998

DOI:https://doi.org/10.1103/PhysRevB.60.10703

©1999 American Physical Society

Authors & Affiliations

Youhua Luo

  • National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People’s Republic of China
  • Department of Physics, Henan University, Kaifeng 475001, People’s Republic of China

Jijun Zhao

  • Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-2200

Guanghou Wang

  • National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People’s Republic of China

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Vol. 60, Iss. 15 — 15 October 1999

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