Raman scattering in polycrystalline 3CSiC: Influence of stacking faults

Stefan Rohmfeld, Martin Hundhausen, and Lothar Ley
Phys. Rev. B 58, 9858 – Published 15 October 1998
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Abstract

We report temperature dependent measurements of the Raman spectra of microcrystalline 3CSiC free-standing films. The measurements were performed under direct laser heating of the thin films for temperatures up to 1700 K. The temperature dependence of the TO- and LO-phonon frequencies agrees well with that of single-crystal 3CSiC, but the Raman lines are considerably broader. We discuss the influence of stacking faults on the linewidth by comparing our results with computer simulated Raman intensity profiles of 3CSiC structures having randomly distributed stacking faults. Good agreement with respect to the linewidth and disorder-induced peak shift is found if the average stacking fault distance is assumed to be 6 Å. We observe an irreversible narrowing of the Raman lines at temperatures above 1900 K, which we ascribe to an annealing of stacking faults in 3CSiC.

  • Received 29 May 1998

DOI:https://doi.org/10.1103/PhysRevB.58.9858

©1998 American Physical Society

Authors & Affiliations

Stefan Rohmfeld, Martin Hundhausen, and Lothar Ley

  • Institut für Technische Physik, Universität Erlangen-Nürnberg, Erwin-Rommel-Straße 1, D-91058 Erlangen, Germany

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Vol. 58, Iss. 15 — 15 October 1998

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