High dielectric permittivity and hole-doping effect in La1xSrxFeO3

G. Chern, W. K. Hsieh, M. F. Tai, and K. S. Hsung
Phys. Rev. B 58, 1252 – Published 15 July 1998
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Abstract

We have measured the complex dielectric permittivity for ceramic samples of La1xSrxFeO3 (0.2<~x<~0.8), which, unlike La1xSrxMnO3 and La1xSrxCoO3, do not exhibit a metal-insulator transition with a small amount of (x0.2) hole doping. This measurement is carried out as a function of Sr doping (0.2<~x<~0.8), frequency (20106Hz) and temperature (80–300 K). These results show strong temperature and frequency dependence and high real dielectric constant, >105, on all compounds at room temperature. This high dielectric polarization is due to a thermally activated process. The associated dipolar thermal activation energy linearly decreases from 260 to 60 meV when Sr doping increases from x=0.2 to 0.6 and it nearly vanishes at x=0.8. The static dielectric constant reaches 107 in high Sr-doping samples due to an extra low-frequency polarization enhancement where a relatively high ac conductivity is also observed. These results are consistent with the persistence of the insulating phase until high (x1) Sr doping and illustrate the doping effect on the dielectric polarization in La1xSrxFeO3.

  • Received 5 January 1998

DOI:https://doi.org/10.1103/PhysRevB.58.1252

©1998 American Physical Society

Authors & Affiliations

G. Chern, W. K. Hsieh, M. F. Tai, and K. S. Hsung

  • Department of Physics, National Chung-Cheng University, Chia-Yi, Taiwan, Republic of China

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Vol. 58, Iss. 3 — 15 July 1998

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