Localization length at the resistivity minima of the quantum Hall effect

M. M. Fogler, A. Yu. Dobin, and B. I. Shklovskii
Phys. Rev. B 57, 4614 – Published 15 February 1998
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Abstract

The resistivity minima of the quantum Hall effect arise due to the localization of the electron states at the Fermi energy, when it is positioned between adjacent Landau levels. In this paper we calculate the localization length ξ of such states at even filling factors ν=2N. The calculation is done for several models of disorder (“white-noise,” short-range, and long-range random potentials). We find that the localization length has a power-law dependence on the Landau level index, ξNα with the exponent α between one and 103, depending on the model. In particular, for a “white-noise” random potential ξ roughly coincides with the classical cyclotron radius. Our results are in reasonable agreement with experimental data on low and moderate mobility samples.

  • Received 23 July 1997

DOI:https://doi.org/10.1103/PhysRevB.57.4614

©1998 American Physical Society

Authors & Affiliations

M. M. Fogler, A. Yu. Dobin, and B. I. Shklovskii

  • Theoretical Physics Institute, University of Minnesota, 116 Church Street Southeast, Minneapolis, Minnesota 55455

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Vol. 57, Iss. 8 — 15 February 1998

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