Electronic energy-level structure, correlation crystal-field effects, and ff transition intensities of Er3+ in Cs3Lu2Cl9

Stefan R. Lüthi, Hans U. Güdel, Markus P. Hehlen, and John R. Quagliano
Phys. Rev. B 57, 15229 – Published 15 June 1998
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Abstract

Single crystals of 1% Er3+-doped Cs3Lu2Cl9 were grown using the Bridgman technique. From highly resolved polarized absorption spectra measured at 10 and 16 K, and upconversion luminescence and excitation spectra measured at 4.2 K, 114 crystal-field levels from 27 2S+1LJ(4f11) multiplets of Er3+ were assigned. 111 of these were used for a semiempirical computational analysis. A Hamiltonian including only electrostatic, spin-orbit, and one-particle crystal-field interactions (C3v) yielded a root-mean-square standard deviation of 159.8cm1 and could not adequately reproduce the experimental crystal-field energies. The additional inclusion of two- and three-body atomic interactions, giving a Hamiltonian with 16 atomic and 6 crystal-field parameters, greatly reduced the rms standard deviation to 22.75cm1. The further inclusion of the correlation crystal-field interaction g10A4 again lowered the rms standard deviation to a final value of 17.98cm1 and provided substantial improvement in the calculated crystal-field splittings of mainly the J=9/2 or J=11/2 multiplets. However, the calculated baricenter energies of some excited-state multiplets deviate from their respective experimental values, and improvements in the atomic part of the effective Hamiltonian are required to correct this deficiency of the model. On the basis of the calculated electronic wave functions, the 12 electric-dipole intensity parameters (C3v) of the total transition dipole strength were obtained from a fit to 95 experimental crystal-field transition intensities. The overall agreement between experimental and calculated intensities is fair. The discrepancies are most likely a result of using the approximate C3v rather than the actual C3 point symmetry of Er3+ in Cs3Lu2Cl9 in the calculations.

  • Received 16 January 1998

DOI:https://doi.org/10.1103/PhysRevB.57.15229

©1998 American Physical Society

Authors & Affiliations

Stefan R. Lüthi and Hans U. Güdel*

  • Departement für Chemie und Biochemie, Universität Bern, Freiestrasse 3, CH-3000 Bern 9, Switzerland

Markus P. Hehlen

  • Optical Sciences Laboratory, The University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109-2122

John R. Quagliano

  • Chemical Science and Technology Division, Los Alamos National Laboratory, Mail stop E543, Los Alamos, New Mexico 87545

  • *Author to whom correspondence should be addressed.

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Vol. 57, Iss. 24 — 15 June 1998

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