Comparison of bonding in amorphous silicon and carbon

S. J. Clark, J. Crain, and G. J. Ackland
Phys. Rev. B 55, 14059 – Published 1 June 1997
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Abstract

We present detailed calculations using the total energy pseudopotential method of relaxed amorphous structures at various densities formed metastably in silicon and carbon. These calculations show a number of interesting features: fivefold coordination of atoms in silicon but not in carbon, bond lengths in carbon increased at reduced volume, with the opposite trend in silicon, and three-center orbitals in carbon. Also, the energy is nearly independent of volume in carbon, suggesting that properties of amorphous carbon will depend strongly on the growth process.

  • Received 13 January 1997

DOI:https://doi.org/10.1103/PhysRevB.55.14059

©1997 American Physical Society

Authors & Affiliations

S. J. Clark, J. Crain, and G. J. Ackland

  • Department of Physics, The University of Edinburgh, Mayfield Road, Edinburgh, Scotland, EH9 3JZ, United Kingdom

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Vol. 55, Iss. 21 — 1 June 1997

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