Atomic arrangement at the AlN/SiC interface

F. A. Ponce; C. G. Van de Walle; J. E. Northrup

doi:10.1103/PhysRevB.53.7473

Atomic arrangement at the AlN/SiC interface

F. A. Ponce, C. G. Van de Walle, and J. E. Northrup

Phys. Rev. B 53, 7473 – Published 15 March 1996

Abstract

The lattice structure of the AlN/SiC interface has been studied in cross section by high-resolution transmission-electron microscopy. Lattice images show planar and crystallographically abrupt interfaces. The atomic arrangement at the plane of the interface is analyzed based on the image characteristics. Possible bonding configurations are discussed. Variations in local image contrast and interplanar separations are used to identify atomic bonding configurations consistent with the lattice images. © 1996 The American Physical Society.

Received 9 June 1995

DOI:https://doi.org/10.1103/PhysRevB.53.7473

Authors & Affiliations

F. A. Ponce, C. G. Van de Walle, and J. E. Northrup

Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304

References (Subscription Required)

Click to Expand

Issue

Vol. 53, Iss. 11 — 15 March 1996

Reuse & Permissions

Access Options

Author publication services for translation and copyediting assistance advertisement

Physical Review B

covering condensed matter and materials physics