Abstract
The effect of a magnetic field applied parallel to the current through quantum confined GaAs/AlAs resonant-tunneling diodes with submicrometer lateral dimensions is studied theoretically. A tunneling current peak associated with an intersubband transition is predicted for intermediate magnetic field. This results from a difference in the degree of confinement in the emitter and the well. The results are compared with experiments.
- Received 13 January 1995
DOI:https://doi.org/10.1103/PhysRevB.52.1504
©1995 American Physical Society