Microscopic calculation of the electron–optical-phonon interaction in ultrathin GaAs/AlxGa1xAs alloy quantum-well systems

Insook Lee, S. M. Goodnick, M. Gulia, E. Molinari, and P. Lugli
Phys. Rev. B 51, 7046 – Published 15 March 1995
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Abstract

We have calculated electron–optical-phonon scattering rates in ultrathin GaAs/AlxGa1xAs alloy quantum-well systems of finite depth, based on a fully microscopic lattice dynamics approach for the phonon spectra. A pseudo-unit-cell model is utilized to calculate the lattice-dynamical properties of the AlxGa1xAs alloy system together with the two-parameter Keating potential and the long-range Coulomb potential between ions. The polar interactions of quantum confined electrons with GaAs- and AlAs-like optical modes are presented for both intrasubband and intersubband transitions, and the comparison with other theoretical calculations made. Good agreement is obtained for the 1→1 and 2→1 transition rates between the microscopic pseuso-unit-cell model and a macroscopic two-pole dielectric continuum model.

  • Received 2 September 1994

DOI:https://doi.org/10.1103/PhysRevB.51.7046

©1995 American Physical Society

Authors & Affiliations

Insook Lee and S. M. Goodnick

  • Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331

M. Gulia and E. Molinari

  • Dipartimento di Fisica, Università di Modena, I-41100 Modena, Italy

P. Lugli

  • Dipartimento di Ingegneria Elettronica, Università di Roma ‘‘Tor Vergata,’’ I-00173 Roma, Italy

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Vol. 51, Iss. 11 — 15 March 1995

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