The electronic structure of the InAs(110)-p(1×1)-Sb(1 ML) system has been studied using angle-resolved photoemission with a synchrotron light source. The InAs(110) surfaces were grown by molecular-beam epitaxy on GaAs(110) substrates. Four two-dimensional states were found and their dispersion along the ΓX¯ and ΓX’¯ directions of the 1×1 surface Brillouin zone was determined. Although there is excellent overall agreement between the experimental energy bands and the predictions of a previously published tight-binding calculation, the bandwidth of two states, along the direction that is orthogonal to the Sb chains, is underestimated. A possible explanation for this is proposed.

• Received 13 February 1995

DOI:https://doi.org/10.1103/PhysRevB.51.14271