A systematic study of ${}_{}{}^{57}{}_{}{}^{}\mathrm{ion}$ implantation in cupric and cuprous oxide films has been reported. The CuO and ${\mathrm{Cu}}_2$O films having excellent stoichiometry were prepared by the technique of laser ablation. The phases formed in the implanted and thermally annealed samples were characterized by Mössbauer spectroscopy and glancing angle x-ray diffraction. For the as-implanted CuO films the ${\mathrm{Cu}}_6$${\mathrm{Fe}}_3$${\mathrm{O}}_7$, ${\mathrm{CuFeO}}_2$,β-${\mathrm{CuFeO}}_2$, and ${\mathrm{Cu}}_2$O phases are detected. The same phases are present in the ${\mathrm{Cu}}_2$O-implanted films with some ${\mathrm{Cu}}_2$O⋅FeO units, metallic Cu atoms, and ${\mathrm{Cu}}_{\mathit{x}}$${\mathrm{Fe}}_{3\mathrm{-}\mathit{x}}$${\mathrm{O}}_4$ spinel in addition. Annealing at 400 °C under argon atmosphere produces in both the cases a strong increase of the ${\mathrm{CuFeO}}_2$ and β-${\mathrm{CuFeO}}_2$ phases at the expense of the ${\mathrm{Cu}}_6$${\mathrm{Fe}}_3$${\mathrm{O}}_7$ phase. This latter phase completely vanishes after annealing at 500 °C and new phases, namely α-${\mathrm{Fe}}_2$${\mathrm{O}}_3$ and small iron clusters appear. The amount of the ${\mathrm{Cu}}_{\mathit{x}}$${\mathrm{Fe}}_{3\mathrm{-}\mathit{x}}$${\mathrm{O}}_4$ phase continues to increase after annealing at 500 and 600 °C, whereas ${\mathrm{CuFeO}}_2$ decreases. The α-${\mathrm{Fe}}_2$${\mathrm{O}}_3$ contribution disappears after annealing at 600 °C.

• Received 22 June 1994

DOI:https://doi.org/10.1103/PhysRevB.50.9743