Raman-scattering spectra of coupled LO-phonon–hole-plasmon modes in p-type GaAs

R. Fukasawa and S. Perkowitz
Phys. Rev. B 50, 14119 – Published 15 November 1994
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Abstract

We have measured the room-temperature Raman spectra of the coupled LO-phonon–damped-hole-plasmon modes of ten p-type, Be-doped, molecular-beam-epitaxy-grown GaAs films with hole concentrations from 6.3×1017 to 2.9×1019 cm3. Although coupled-mode theory predicts the existence of two modes, we observed only one, with an asymmetric line shape. A line-shape analysis combining the deformation-potential and electro-optic mechanisms shows that the theory reproduces the data very well. It also suggests that one mode is suppressed by the large damping of the hole plasmon. The asymmetry of the observed peak is shown to come from interference between Raman scattering from atomic displacement fluctuations and that from macroscopic electric-field fluctuations. The ratio between Hall mobilities of the holes and optical mobilities of the holes from the Raman measurements is μHall/ μoptical=1.5–2.6 for different hole concentrations.

  • Received 25 July 1994

DOI:https://doi.org/10.1103/PhysRevB.50.14119

©1994 American Physical Society

Authors & Affiliations

R. Fukasawa and S. Perkowitz

  • Department of Physics, Emory University, Atlanta, Georgia 30322-2430

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Issue

Vol. 50, Iss. 19 — 15 November 1994

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