We have investigated the effect of Sb surfactants on the crystallization of Si adatoms on the amorphous-Si (a-Si) surface during Si molecular-beam deposition. It was observed that the Sb segregated to the surface and prevented crystallization, resulting in a-Si formation even at around 600 °C. Comparison of the grain growth modes on the a-Si surface with and without the surfactant clearly shows the reduction of the diffusion length of the surface-free adatoms by the surfactant.

• Received 17 December 1992

DOI:https://doi.org/10.1103/PhysRevB.47.6803