Abstract
The electronic structure of the InAs(110) cleavage surface has been studied by angle-resolved photoelectron spectroscopy. The bulk band structure has been calculated utilizing the augmented plane-wave method and then the bulk bands have been projected along the lines Γ¯-X¯ and Γ¯-Y¯ of the surface Brillouin zone (SBZ). Three surface-related structures have been found and their initial state versus dispersion along the line Γ¯-X¯ and the line Γ¯-Y¯ of the SBZ has been determined. The structures are identified as , , and along Γ¯-X¯ and as , , and along Γ¯-Y¯.
- Received 3 August 1992
DOI:https://doi.org/10.1103/PhysRevB.47.2427
©1993 American Physical Society